Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy

Marso, M.; Javorka, P.; Kordos, P.; Wolter, M.; Lüth, H.

doi:10.1063/1.1540239

Journal Article

Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy

Marso, M.FZJ* ; Wolter, M.FZJ* ; Javorka, P.FZJ* ; Kordos, P.FZJ* ; Lüth, H.FZJ*

2003
American Institute of Physics Melville, NY

Applied physics letters 82, 633 - 635 (2003) [10.1063/1.1540239]

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Please use a persistent id in citations: http://hdl.handle.net/2128/1962 doi:10.1063/1.1540239

Abstract: The influence of a substrate voltage on the dc characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) on silicon (111) substrate is profited to investigate traps that are located between the substrate and the two-dimensional electron gas channel. The transient of the drain current after applying a negative substrate voltage is evaluated in the temperature range from 30 to 100 degreesC. With this method, known as backgating current deep level transient spectroscopy, majority carrier traps with activation energy of 200 meV as well as minority carrier traps at 370 meV are identified. The experiments are performed on completed HEMTs, allowing the investigation of the influence of device fabrication technology. (C) 2003 American Institute of Physics.

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