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Talk (non conference) PreJuSER-28249
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Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth



2000

Kolloquium Institut für Festkörper- und Halbleiterphysik : Universität Linz
Seminar, LinzLinz, 18 Dec 20002000-12-18


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Institut für Grenzflächenforschung und Vakuumphysik (IGV)
Research Program(s):
  1. Grenzflächenaspekte der Informationstechnik (25.35.0)

Appears in the scientific report 2000
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Document types > Presentations > Talks (non-conference)
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 Record created 2012-11-13, last modified 2017-06-01
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