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Structural and optical properties of epitaxial BaTiO3 thin films grown on GdScO3(110).

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2003
American Institute of Physics Melville, NY

Applied physics letters 82, 3460 () [10.1063/1.1575935]

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Abstract: We have prepared 1-mum-thick epitaxial BaTiO3 thin films on GdScO3(110) using pulsed laser deposition. The structural perfection of the films was revealed by a rocking curve width of Deltaomega=0.13degrees for the 002 BaTiO3 reflection and a Rutherford backscattering spectrometry/channeling minimum yield, chi(min), of 0.5% measured for the Ba signal behind the surface peak. High-resolution transmission electron microscopy revealed an epitaxial relationship between BaTiO3 and GdScO3 and a sharp interface between the substrate and the film. The refractive index of the BaTiO3 film was n(o)=2.329+/-0.002 and n(e)=2.307+/-0.002 at a wavelength of 632.8 nm and n(o)=2.248+/-0.002 and n(e)=2.228+/-0.002 at a wavelength of 1523 nm. The optical losses were less than 2 dB/cm at a wavelength of 632.8 nm. (C) 2003 American Institute of Physics.

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Note: Record converted from VDB: 12.11.2012

Contributing Institute(s):
  1. Mikrostrukturforschung (IFF-IMF)
  2. Institut für Halbleiterschichten und Bauelemente (ISG-1)
Research Program(s):
  1. Kondensierte Materie (M02)

Appears in the scientific report 2003
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