Journal Article

PreJuSER-33117

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Nonlinear charging effect of quantum dots in a p-i-n diode

Kießlich, G. ; Wacker, A. ; Schöll, E. ; Vitusevich, S. A.FZJ* ; Belyaev, A. E. ; Danylyuk, S. V.FZJ* ; Förster, A.FZJ* ; Klein, N.FZJ* ; Henini, M.

2003
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/2085  doi:10.1103/PhysRevB.68.125331

Abstract: The current through a p-i-n diode containing a layer of self-assembled InAs quantum dots in the intrinsic region is investigated. A series of peaks is observed in the differential conductance below the flat band regime which we attribute to electron tunneling in the quantum dot and wetting layer states, combining the carrier recombination and the carrier relaxation effects. This phenomenon is investigated numerically on the basis of a master equation model. Criteria for the observability of the charging of individual quantum dots are discussed. A key point is the presence of Coulomb screening as otherwise the long-range interdot interactions smear out the energy level spectrum.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Bio- und Chemosensoren (ISG-2)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2003
Notes: This version is available at the following Publisher URL: http://prb.aps.org

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