Journal Article

PreJuSER-3458

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Josephson tunnel junctions with strong ferromagnetic interlayer

Bannykh, A. A.FZJ* ; Pfeiffer, J. ; Solyarov, V. S. ; Batov, I. E.FZJ* ; Ryazanov, V. V. ; Weides, M.FZJ*

2009
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/11059  doi:10.1103/PhysRevB.79.054501

Abstract: The dependence of the critical current density j(c) on the ferromagnetic interlayer thickness d(F) was determined for Nb/Al2O3/Cu/Ni/Nb Josephson tunnel junctions with ferromagnetic Ni interlayer thicknesses from very thin films (similar to 1 nm) upward and classified into F-layer thickness regimes showing a dead magnetic layer, exchange, exchange + anisotropy and total suppression of j(c). The Josephson coupling changes from 0 to pi as function of d(F), and-very close to the crossover thickness-as function of temperature. The strong suppression of the supercurrent in comparison to nonmagnetic Nb/Al2O3/Cu/Nb junctions indicated that the insertion of a F layer leads to additional interface scattering. The transport inside the dead magnetic layer was in dirty limit. For the magnetically active regime fitting with both the clean and the dirty limit theories was carried out, indicating dirty limit condition, too. The results were discussed in the framework of literature.

Keyword(s): J

Note: The authors thank H. Kohlstedt, D. Sprungmann, E. Goldobin, D. Koelle, R. Kleiner, N. Pugach, M. Yu. Kupriyanov, and A. Palevski for stimulating discussions. J. P. was supported by Studienstiftung des Deutschen Volkes, V. S. S. and V. V. R. by the MOST-RFBR Project No. 06-02-72025 and M. W. by DFG Project No. WE 4359/1-1.

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2009

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