Journal Article

PreJuSER-34850

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Measurement of the band offsets between amorphous LaAlO3 and silicon

Edge, L. F. ; Schlom, D. G. ; Chambers, S. A. ; Cicerrella, E. ; Freeouf, J. L. ; Holländer, B.FZJ* ; Schubert, J.FZJ*

2004
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1972  doi:10.1063/1.1644055

Abstract: The conduction and valence band offsets between amorphous LaAlO3 and silicon have been determined from x-ray photoelectron spectroscopy measurements. These films, which are free of interfacial SiO2, were made by molecular-beam deposition. The band line-up is type I with measured band offsets of 1.8+/-0.2 eV for electrons and 3.2+/-0.1 eV for holes. The band offsets are independent of the doping concentration in the silicon substrate as well as the amorphous LaAlO3 film thickness. These amorphous LaAlO3 films have a bandgap of 6.2+/-0.1 eV. (C) 2004 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2004
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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