Surface states and origin of the Fermi level pinning on nonpolar GaN(1100) surfaces

Ivanova, L.; Borisova, S.; Ebert, Ph.; Dähne, M.; Laubsch, A.; Eisele, H.

doi:10.1063/1.3026743

Journal Article

Surface states and origin of the Fermi level pinning on nonpolar GaN(1100) surfaces

Ivanova, L. ; Borisova, S. ; Eisele, H.FZJ* ; Dähne, M. ; Laubsch, A. ; Ebert, P.FZJ*

2008
American Institute of Physics Melville, NY

Applied physics letters 93, 92110 (2008) [10.1063/1.3026743]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17203 doi:10.1063/1.3026743

Abstract: GaN1000 cleavage surfaces were investigated by cross-sectional scanning tunneling microscopy and spectroscopy. It is found that both the N and Ga derived intrinsic dangling bond surface states are outside of the fundamental band gap. Their band edges are both located at the Gamma point of the surface Brillouin zone. The observed Fermi level pinning at 1.0 eV below the conduction band edge is attributed to the high step and defect density at the surface but not to intrinsic surface states.

Keyword(s): J ; Brillouin zones (auto) ; conduction bands (auto) ; dangling bonds (auto) ; energy gap (auto) ; Fermi level (auto) ; gallium compounds (auto) ; III-V semiconductors (auto) ; scanning tunnelling microscopy (auto) ; scanning tunnelling spectroscopy (auto) ; surface states (auto) ; wide band gap semiconductors (auto)