Journal Article

PreJuSER-36834

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Direct observation of electrical charges at dislocations in GaAs by cross-sectional scanning tunneling microscopy

Ebert, P.FZJ* ; Domke, G. D.FZJ* ; Urban, K.FZJ*

2001
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1067  doi:10.1063/1.1341219

Abstract: We demonstrate the possibility of simultaneous determination of the type and electrical charge state of dislocations in GaAs by cross-sectional scanning tunneling microscopy (STM). The methodology is demonstrated for a dissociated perfect dislocation in highly Si-doped GaAs(110) surfaces. The STM images of the dislocation penetrating GaAs cleavage surface show that both partial dislocation cores as well as the stacking fault between the two partial dislocation cores are negatively charged. (C) 2001 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Mikrostrukturforschung (IFF-IMF)

Research Program(s):

1. Erforschung neuer Materialien (23.55.0)

Appears in the scientific report 2001
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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