Journal Article

PreJuSER-37843

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Epitaxy of diamond on Si(100) and surface-roughening-induced crystal misorientation

Jiang, X. ; Jia, C. L.FZJ* ; Szameitat, M. ; Rickers, C.

2001
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/1079  doi:10.1103/PhysRevB.64.245413

Abstract: In a recent paper [Phys. Rev. Lett. 84, 3658 (2000)] a direct diamond epitaxy on the silicon substrate is demonstrated not only at the interface formed during the growth process but also at the nucleation sites. Small (001) terraces with dimensions of several atomic distances at the site of nucleation are observed due to the roughening of silicon surface and lead to the grain misorientation, To further improve the understanding of the subject the microstructure and interfaces in diamond films on silicon substrates grown in the stages of the bias-enhanced nucleation (BEN) and the initial crystal growth were studied by means of atomic force microscopy, scanning electron microscopy, and high-resolution transmission electron microscopy. It is showed that the roughness of the wafer starts to increase from the beginning of the BEN and the renucleation on existing crystallites induced by the ion bombardment leading to the loss of epitaxy.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Mikrostrukturforschung (IFF-IMF)

Research Program(s):

1. Festkörperforschung für die Informationstechnik (23.42.0)

Appears in the scientific report 2001
Notes: This version is available at the following Publisher URL: http://prb.aps.org

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