Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon

Edge, L. F.; Holländer, B.; Brewer, R. T.; Copel, M.; Lucovsky, G.; Stemmer, S.; Schlom, D. G.; Williams, J. R.; Schubert, J.; Chabal, Y. J.; Chambers, S. A.; Hinkle, C.; Yang, Y.

doi:10.1063/1.1759065

Journal Article

Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon

Edge, L. F. ; Schlom, D. G. ; Brewer, R. T. ; Chabal, Y. J. ; Williams, J. R. ; Chambers, S. A. ; Hinkle, C. ; Lucovsky, G. ; Yang, Y. ; Stemmer, S. ; Copel, M. ; Holländer, B.FZJ* ; Schubert, J.FZJ*

2004
American Institute of Physics Melville, NY

Applied physics letters 84, 4629 - 4631 (2004) [10.1063/1.1759065]

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Please use a persistent id in citations: http://hdl.handle.net/2128/1975 doi:10.1063/1.1759065

Abstract: Amorphous LaAlO3 thin films have been deposited by molecular beam deposition directly on silicon without detectable oxidation of the underlying substrate. We have studied these abrupt interfaces by Auger electron spectroscopy, high-resolution transmission electron microscopy, medium-energy ion scattering, transmission infrared absorption spectroscopy, and x-ray photoelectron spectroscopy. Together these techniques indicate that the films are fully oxidized and have less than 0.2 A of SiO2 at the interface between the amorphous LaAlO3 and silicon. These heterostructures are being investigated for alternative gate dielectric applications and provide an opportunity to control the interface between the silicon and the gate dielectric. (C) 2004 American Institute of Physics.

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