Double-barrier Josephson junctions : theory and experiment

Brinkman, A.; Cassel, D.; Golubov, A. A.; Kupriyanov, M. Y.; Siegel, M.; Rogalla, H.

doi:10.1109/77.919551

Journal Article

Double-barrier Josephson junctions : theory and experiment

Brinkman, A. ; Cassel, D.FZJ* ; Golubov, A. A. ; Kupriyanov, M. Y. ; Siegel, M.FZJ* ; Rogalla, H.

2001
IEEE New York, NY

IEEE transactions on applied superconductivity 11, 1146 (2001) [10.1109/77.919551]

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Please use a persistent id in citations: http://hdl.handle.net/2128/2089 doi:10.1109/77.919551

Abstract: New theoretical and experimental results on double-barrier SIS'IS Josephson junctions are presented (I is a tunnel barrier, S' is a thin film with critical temperature lower than that of S), The previously developed microscopic model for the stationary case, which describes the critical currents in Nb/Al/Nb junctions, is extended to the non-equilibrium regime of finite voltage. In particular, an intrinsic shunting resistance is estimated from I-V curves. We formulate the requirements for interface barriers in order to realize non-hysteretic SIS'IS junctions with high critical current density and IcRN products. A comparison with single-barrier SIS junctions with high critical current density is carried out.

Keyword(s): J ; double-barrier (auto) ; Josephson structures (auto) ; non-stationary properties (auto)

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