Gast ::
| Hauptseite > Publikationsdatenbank > Penicillin detection by means of silicon-based field-effect structures |
| Hauptseite > Publikationsdatenbank > Penicillin detection by means of silicon-based field-effect structures |
| Journal Article | PreJuSER-40355 |
; ; ; ; ;
2001
MYU
Tokyo
This record in other databases: 
Abstract: Two types of semiconductor-based field-effect biosensors, i.e., a capacitive electrolyte-isolator-semiconductor (EIS) sensor and an enzyme field-effect transistor (EnFET) with different pH-sensitive transducer materials (Si3N4 and Ta2O5) and with different enzyme immobilisation methods (heterobifunctional cross-linking and physical adsorption) are investigated for penicillin detection. Capacitive EIS sensors with diffusion barriers are suitable for the detection of different kinds of penicillin: Penicillin G, ampicillin and amoxicillin. Compared to the conventional methods of measurement in penicillin solutions, the introduction of a diffusion barrier in combination with a suitable working buffer improves the detectable amount of penicillin to about 0.05 mug. Here, only 10 mul of the analyte is needed for a single penicillin measurement. For a penicillin FET with adsorptively immobilised penicillinase, excellent working characteristics, namely, high penicillin sensitivity (120 +/- 10 mV/mM in the linear concentration range of 0.05-1 mM), low hysteresis (< 4 mV), low detection limit of 10 muM and long lifetime (more than 5 months) were achieved by choosing Ta2O5 as a pH-sensitive transducer material, and a low capacity polymix buffer.
Keyword(s): J ; penicillin (auto) ; capacitive EIS sensor (auto) ; cross-sensitivity (auto) ; EnFET (auto) ; low detection limit (auto)
|
The record appears in these collections: |