Halbleiterschichtsysteme und Mesoskopische Strukturen

IdentifierG:(DE-Juel1)FUEK69

 

Recent Publications

All known publications ...
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Growth of buffer structures for AlGaN/GaN HEMT on silicon substrates
EW-MOVPE-X
Seminar, Lecce, ItalyLecce, Italy, 8 Jun 20032003-06-08
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Silicon (111) as alternative substrate for AlGaN/GaN HEMT
The Fifth International Conference on Nitride Semiconductors (ICNS-5)
Seminar, Nara, JapanNara, Japan, 25 May 20032003-05-25
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The Influence of Nucleation Parameters on GaN Buffer Layer Properties Used for HEMT Application
The Fourth International Conference on Nitride Semiconductors (ICNS-4)
Seminar, Denver, Colo.Denver, Colo., 16 Jul 20012001-07-16
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Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE
China-Japan Workshop on Nitride Semiconductors and Materials Devices
Seminar, Shanghai, ChinaShanghai, China, 12 Jul 20012001-07-12
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GaN and AlGaN/GaN HEMT on (111) Silicon Substrates
E Wide-Bandgap Electronics : MRS Spring-Meeting ; Symposium
Seminar, San Francisco, CASan Francisco, CA, 17 Apr 20012001-04-17
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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book  ;  ;  ;  ;  ;
Microscaled living bioelectronic systems - coupling beetles to silicon transducers
Proceedings of the Electrochemical Society : San Francisco, USA, 2.-7. September. - 18 (2001). - 1-56677-351-2. - S. 165 BibTeX | EndNote: XML, Text | RIS

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High order" hybrid sensor module based on an identical transducer principle
Proceedings of the Electrochemical Society : San Francisco, USA, 2.-7. September. - 18 (2001). - 1-56677-351-2. - S. 143 BibTeX | EndNote: XML, Text | RIS

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Superconductor/semiconductor junctions
Berlin : Springer, Springer tracts in modern physics 174, () BibTeX | EndNote: XML, Text | RIS

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Solid surfaces, interfaces and thin films
Berlin : Springer, Advanced texts in physics () BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Contribution to a conference proceedings/Contribution to a book
Chemical vapor epitaxy of GaxAl(1-x)As
Encyclopedia of materials : science and technology . 2 / ed. K. H. J. Buschow ... - Oxford, 2001. - S. 1187 BibTeX | EndNote: XML, Text | RIS

All known publications ...
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 Record created 2012-11-14, last modified 2013-02-05



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