Journal Article

PreJuSER-40716

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures after Si+ ion implantation

Holländer, B.FZJ* ; Buca, D.FZJ* ; Mörschbächer, M.FZJ* ; Lenk, S.FZJ* ; Mantl, S.FZJ* ; Herzog, H.-J. ; Hackbarth, T. ; Loo, R. ; Caymax, M. ; Fichtner, P. F. P.

2004
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1993  doi:10.1063/1.1765851

Abstract: The strain relaxation of pseudomorphic Si1-xGex layers (x=0.21,...,0.33) was investigated after low-dose Si+ ion implantation and annealing. The layers were grown by molecular-beam epitaxy or chemical vapor deposition on Si(100) or silicon-on-insulator. Strain relaxation of up to 75% of the initial strain was observed at temperatures as low as 850 degreesC after implantation of Si ions with doses below 2x10(14) cm(-2). We suggest that the Si implantation generates primarily dislocation loops in the SiGe layer and in the underlying Si which convert to strain relaxing misfit segments. The obtained results are comparable to strain relaxation achieved after He+ implantation with doses of 1-2x10(16) cm(-2). (C) 2004 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2004
Notes: This version is available at the following Publisher URL: http://jap.aip.org

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