Journal Article

PreJuSER-43837

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Femtosecond Response of a Free-standing LT-GaAs Photoconductive Switch

Zheng, X. ; Xu, Y. ; Sobolewski, R. ; Adam, R.FZJ* ; Mikulics, V. V. ; Siegel, M. ; Kordos, P.FZJ*

2003
Optical Soc. of America Washington, DC

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Please use a persistent id in citations: doi:10.1364/AO.42.001726

Abstract: We present a novel, free-standing low-temperature GaAs (LT-GaAs) photoconductive switch and demonstrate its femtosecond performance. A 1-mum-thick layer of a single-crystal LT-GaAs was patterned into 5-10-mum-wide and 15-30-mum-long bars, separated from their GaAs substrate and, subsequently, placed across gold coplanar transmission lines deposited on a Si substrate, forming a photoconductive switch. The switch was excited with 110-fs-wide optical pulses, and its photoresponse was measured with an electro-optic sampling system. Using 810-nm optical radiation, we recorded an electrical transient as short as 360 fs (1.25 THz, 3-dB bandwidth) and established that the photo-carrier lifetime in our LT-GaAs was 150 fs. Our free-standing devices exhibited quantum efficiency of the order of similar to7%, and their photoresponse amplitude was a linear function of the applied voltage bias, as well as a linear function of the excitation power, below a well-defined saturation threshold. (C) 2003 Optical Society of America.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)

Research Program(s):

1. Kondensierte Materie (M02)

Appears in the scientific report 2003

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