Journal Article

PreJuSER-44455

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Minority carrier properties of microcrystalline silicon thin films grown by HW-CVD and VHF-PECVD techniques

Okur, S. ; Günes, M. ; Isik, N. ; Finger, F.FZJ* ; Carius, R.FZJ*

2005
INOE & INFM Bucharest

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Please use a persistent id in citations: http://hdl.handle.net/2128/2765

Abstract: Opto-electronic properties of pc-Si:H films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD) and very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) techniques with various silane concentrations (SC) have been investigated using Raman spectroscopy, the steady-state photocarrier grating technique (SSPG), and the steady-state photoconductivity (SSPC). A correlation between the minority carrier transport properties and the microstructure has been found, using the dependence of the diffusion length (L-d) on the SC and Raman intensity ratio (I-C(RS)) representing crystalline volume fractions. I-c(RS) changes from 0.22 to 0.77. L-d increases with increasing I-c(RS). It peaks around 0.5 with a maximum value of 270 nm, then decreases. Similar dependences of L-d on I-c(RS) were obtained for films prepared by both HWCVD and VHF-PECVD. However, the grating quality factor measured on highly crystalline HWCVD films is substantially smaller than that found for VHF-PECVD films, indicating a relatively higher surface roughness present in the highly crystalline HWCVD films.

Keyword(s): J ; Raman spectroscopy (auto) ; microcrystalline silicon thin film (auto) ; diffusion length (auto) ; steady state photocarrier grating technique (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Photovoltaik (IPV)

Research Program(s):

1. Photovoltaik (E02)

Appears in the scientific report 2005

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Database coverage:

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