Journal Article

PreJuSER-45709

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN

Mikulics, V. V.FZJ* ; Marso, M.FZJ* ; Javorka, P.FZJ* ; Kordos, P.FZJ* ; Lüth, H.FZJ* ; Kocan, M. ; Rizzi, A. ; Wu, S. ; Sobolewski, R.

2005
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/2010  doi:10.1063/1.1938004

Abstract: We have fabricated and characterized ultrafast metal-semiconductor- metal photodetectors based on low-temperature-grown (LT) GaN. The photodetector devices exhibit up to 200 kV/cm electric breakdown fields and subpicosecond carrier lifetime. We recorded as short as 1.4-ps-wide electrical transients using 360-nm-wavelength and 100-fs-duration laser pulses, that is corresponding to the carrier lifetime of 720 fs in our LT GaN material. © 2005 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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