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@ARTICLE{Galanakis:46233,
author = {Galanakis, I. and Lezaic, M. and Bihlmayer, G. and Blügel,
S.},
title = {{I}nterface properties of {N}i{M}n{S}b/{I}n{P} and
{N}i{M}n{S}b/{G}a{A}s contacts},
journal = {Physical review / B},
volume = {71},
number = {21},
issn = {1098-0121},
address = {College Park, Md.},
publisher = {APS},
reportid = {PreJuSER-46233},
pages = {214431},
year = {2005},
note = {Record converted from VDB: 12.11.2012},
abstract = {We study the electronic and magnetic properties of the
interfaces between the half-metallic Heusler alloy NiMnSb
and the binary semiconductors InP and GaAs using two
different state-of-the-art full-potential ab initio
electronic structure methods. Although in the case of most
NiMnSb/InP(001) contacts the half-metallicity is lost, it is
possible to keep a high degree of spin polarization when the
interface is made up by Ni and P layers. In the case of the
GaAs semiconductor, the larger hybridization between the
Ni-d and As-p orbitals with respect to the hybridization
between the Ni-d and P-p orbitals destroys this
polarization. The (111) interfaces present strong interface
states, but also in this case there are few interfaces
presenting a high spin polarization at the Fermi level which
can reach values up to $74\%.$},
keywords = {J (WoSType)},
cin = {CNI / IFF-TH-I},
ddc = {530},
cid = {I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB30},
pnm = {Kondensierte Materie},
pid = {G:(DE-Juel1)FUEK242},
shelfmark = {Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000230276600068},
doi = {10.1103/PhysRevB.71.214431},
url = {https://juser.fz-juelich.de/record/46233},
}