% IMPORTANT: The following is UTF-8 encoded. This means that in the presence % of non-ASCII characters, it will not work with BibTeX 0.99 or older. % Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or % “biber”. @ARTICLE{Galanakis:46233, author = {Galanakis, I. and Lezaic, M. and Bihlmayer, G. and Blügel, S.}, title = {{I}nterface properties of {N}i{M}n{S}b/{I}n{P} and {N}i{M}n{S}b/{G}a{A}s contacts}, journal = {Physical review / B}, volume = {71}, number = {21}, issn = {1098-0121}, address = {College Park, Md.}, publisher = {APS}, reportid = {PreJuSER-46233}, pages = {214431}, year = {2005}, note = {Record converted from VDB: 12.11.2012}, abstract = {We study the electronic and magnetic properties of the interfaces between the half-metallic Heusler alloy NiMnSb and the binary semiconductors InP and GaAs using two different state-of-the-art full-potential ab initio electronic structure methods. Although in the case of most NiMnSb/InP(001) contacts the half-metallicity is lost, it is possible to keep a high degree of spin polarization when the interface is made up by Ni and P layers. In the case of the GaAs semiconductor, the larger hybridization between the Ni-d and As-p orbitals with respect to the hybridization between the Ni-d and P-p orbitals destroys this polarization. The (111) interfaces present strong interface states, but also in this case there are few interfaces presenting a high spin polarization at the Fermi level which can reach values up to $74\%.$}, keywords = {J (WoSType)}, cin = {CNI / IFF-TH-I}, ddc = {530}, cid = {I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB30}, pnm = {Kondensierte Materie}, pid = {G:(DE-Juel1)FUEK242}, shelfmark = {Physics, Condensed Matter}, typ = {PUB:(DE-HGF)16}, UT = {WOS:000230276600068}, doi = {10.1103/PhysRevB.71.214431}, url = {https://juser.fz-juelich.de/record/46233}, }