Photomixers fabricated on nitrogen-ion-implanted GaAs

Mikulics, V. V.; Güsten, R.; Wolter, M.; Wu, S.; Sobolewski, R.; Buca, D.; Schieder, R.; Kordos, P.; Michael, E. A.; Khafizov, M.; Förster, A.; Lüth, H.; Stancek, S.; Li, X.; Cámara Mayorga, I.; Marso, M.; Kovac, P.

doi:10.1063/1.2006983

Journal Article

Photomixers fabricated on nitrogen-ion-implanted GaAs

Mikulics, V. V.FZJ* ; Marso, M.FZJ* ; Cámara Mayorga, I. ; Güsten, R. ; Stancek, S. ; Kovac, P. ; Wu, S. ; Li, X. ; Khafizov, M. ; Sobolewski, R. ; Michael, E. A. ; Schieder, R. ; Wolter, M.FZJ* ; Buca, D.FZJ* ; Förster, A.FZJ* ; Kordos, P.FZJ* ; Lüth, H.FZJ*

2005
American Institute of Physics Melville, NY

Applied physics letters 87, 041106 (2005) [10.1063/1.2006983]

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Please use a persistent id in citations: http://hdl.handle.net/2128/2015 doi:10.1063/1.2006983

Abstract: We report on fabrication and measurement of photomixers based on nitrogen-ion-implanted GaAs. We used energies of 500 keV, 700 keV, and 880 keV to implant N+ ions into GaAs substrates with an ion concentration of similar to 3x10(12) cm(-2). The resulting material exhibited 110 fs carrier lifetime due to implantation-induced defects. Our photomixers were fabricated as metal-semiconductor-metal devices, placed at the feed point of a broadband antenna. Optoelectronic measurements were performed in the wavelength range between 350 nm and 950 nm. In comparison to their counterparts (photomixers fabricated on low-temperature-grown GaAs) the N+-implanted GaAs photomixers exhibit improvements on both the output power and responsivity. A maximal responsivity of above 100 mA/W was achieved and we did not observe any dependence of the mixer cut-off frequency on the bias voltage. These characteristics make N+-implanted GaAs the material of choice for efficient optoelectronic photomixers. (c) 2005 American Institute of Physics.

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