Journal Article PreJuSER-47552

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Atmospheric adsorption effects in hot-wire chemical-vapor-deposition microcrystalline silicon films with different electrode configurations

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2005
Springer Science + Business Media Berlin

Semiconductors 39, 343 - 346 () [10.1134/1.1882798]

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Abstract: Hot-wire chemical-vapor-disposition (CVD) thin silicon films are studied by means of dark conductivity, FTIR, hydrogen evolution, and SEM surface characterization. Three types of metastability are observed: (1) long term irreversible degradation due to oxidization processes on the film surface, (2) reversible degradation determined by uncontrolled water and/or oxygen adsorption, and (3) a fast field-switching effect in the film bulk. We propose that this effect is associated with the morphology changes during film growth and an electrical field induced by adsorbed atmospheric components on the film surface. It is found that metastable processes close to the film surface are stronger than in the bulk. (c) 2005 Pleiades Publishing, Inc.

Keyword(s): J


Note: Record converted from VDB: 12.11.2012

Contributing Institute(s):
  1. Institut für Photovoltaik (IPV)
Research Program(s):
  1. Photovoltaik (E02)

Appears in the scientific report 2005
Database coverage:
JCR ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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Document types > Articles > Journal Article
Institute Collections > IMD > IMD-3
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IEK > IEK-5
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 Record created 2012-11-13, last modified 2024-07-08



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