Journal Article

PreJuSER-47553

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Computer modelling of multi-trapping and hopping transport in disordered semiconductors

Main, Y. L. ; Marshall, J. M. ; Reynolds, S.FZJ*

2005
INOE & INFM Bucharest

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Please use a persistent id in citations: http://hdl.handle.net/2128/2770

Abstract: In this paper we demonstrate a simple computational procedure for the simulation of transport in a disordered semiconductor in which both multi-trapping and hopping processes are occurring simultaneously, We base the simulation on earlier work on hopping transport, which used a Monte-Carlo method. We use the same model concepts, but employ a stochastic matrix approach to speed computation, and include also multi-trapping transitions between localised and extended states. We use the simulation to study the relative contributions of extended state conduction (with multi-trapping) and hopping conduction (via localised states) to transient photocurrents, for various distributions of localised gap states, and as a function of temperature. The implications of our findings for the interpretation of transient photocurrents are examined.

Keyword(s): J ; hopping transport (auto) ; disordered semiconductors (auto) ; computer simulation (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Photovoltaik (IPV)

Research Program(s):

1. Photovoltaik (E02)

Appears in the scientific report 2005

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Database coverage:

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