Journal Article

PreJuSER-47554

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Effects of thermal annealing and long-term ageing on electronic defects in CdSe thin films

Nesheva, D. ; Reynolds, S.FZJ* ; Aneva, Z. ; Main, Y. L.

2005
INOE & INFM Bucharest

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Please use a persistent id in citations: http://hdl.handle.net/2128/2771

Abstract: Defect distributions in CdSe thin films, 'as deposited', following thermal annealing, and after 10 years' storage under room conditions are investigated. Steady-state photoconductivity measurements at low temperatures suggest a decrease in the density of 'slow' recombination centres following annealing or storage. Transient photocurrent and thermally stimulated current spectroscopics reveal a peak in the density of states at 0.65 eV below the conduction band edge in the as-deposited film. This broadens and shifts towards the conduction band edge on annealing. Stored films exhibit an almost flat defect distribution, which may result from a combination of both types of defect. Raman scattering measurements suggest that both storage and annealing result in increased structural order.

Keyword(s): J ; CdSe thin films (auto) ; photoconductivity (auto) ; thermally stimulated currents (auto) ; defect states (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Photovoltaik (IPV)

Research Program(s):

1. Photovoltaik (E02)

Appears in the scientific report 2005

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Database coverage:

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