000049699 001__ 49699 000049699 005__ 20180211170319.0 000049699 0247_ $$2DOI$$a10.1016/j.actamat.2005.07.033 000049699 0247_ $$2WOS$$aWOS:000232859000020 000049699 037__ $$aPreJuSER-49699 000049699 041__ $$aeng 000049699 082__ $$a670 000049699 084__ $$2WoS$$aMaterials Science, Multidisciplinary 000049699 084__ $$2WoS$$aMetallurgy & Metallurgical Engineering 000049699 1001_ $$0P:(DE-Juel1)VDB518$$aGuo, X.$$b0$$uFZJ 000049699 245__ $$aIonic conduction in zirconia films on nanometer thickness 000049699 260__ $$aAmsterdam [u.a.]$$bElsevier Science$$c2005 000049699 300__ $$a5161 000049699 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article 000049699 3367_ $$2DataCite$$aOutput Types/Journal article 000049699 3367_ $$00$$2EndNote$$aJournal Article 000049699 3367_ $$2BibTeX$$aARTICLE 000049699 3367_ $$2ORCID$$aJOURNAL_ARTICLE 000049699 3367_ $$2DRIVER$$aarticle 000049699 440_0 $$067$$aActa Materialia$$v53$$x1359-6454 000049699 500__ $$aRecord converted from VDB: 12.11.2012 000049699 520__ $$aPolycrystalline 8 mol% Y2O3-stabilized ZrO2 films with thicknesses of 12 and 25 nm were deposited on (100) MgO substrates, their nanostructures were investigated by means of transmission electron microscopy (TEM), high-resolution TEM and atomic force microscopy, and the electrical properties of the nanostructured films were characterized in dry and humid O-2. Compared with microcrystalline bulk ceramics, the ionic conductivity of the nanostructured films is lower by about a factor of 4, which is mainly due to the lower bulk conductivity and the low grain-boundary conductivity. There is not remarkable proton conduction in the nanostructured films when annealed in water vapor, and the influence of the ZrO2/MgO interface on its ionic conduction is negligible. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. 000049699 536__ $$0G:(DE-Juel1)FUEK242$$2G:(DE-HGF)$$aKondensierte Materie$$cM02$$x0 000049699 588__ $$aDataset connected to Web of Science 000049699 650_7 $$2WoSType$$aJ 000049699 65320 $$2Author$$azirconia 000049699 65320 $$2Author$$ananostructure 000049699 65320 $$2Author$$aelectrical properties 000049699 65320 $$2Author$$alaser deposition 000049699 7001_ $$0P:(DE-HGF)0$$aVasco, E.$$b1 000049699 7001_ $$0P:(DE-HGF)0$$aMi, S.$$b2 000049699 7001_ $$0P:(DE-Juel1)VDB2799$$aSzot, K.$$b3$$uFZJ 000049699 7001_ $$0P:(DE-HGF)0$$aWachsman, E.$$b4 000049699 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b5$$uFZJ 000049699 773__ $$0PERI:(DE-600)2014621-8$$a10.1016/j.actamat.2005.07.033$$gVol. 53, p. 5161$$p5161$$q53<5161$$tActa materialia$$v53$$x1359-6454$$y2005 000049699 8567_ $$uhttp://dx.doi.org/10.1016/j.actamat.2005.07.033 000049699 909CO $$ooai:juser.fz-juelich.de:49699$$pVDB 000049699 9131_ $$0G:(DE-Juel1)FUEK242$$bMaterie$$kM02$$lKondensierte Materie$$vKondensierte Materie$$x0 000049699 9141_ $$y2005 000049699 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed 000049699 9201_ $$0I:(DE-Juel1)VDB321$$d31.12.2006$$gIFF$$kIFF-IEM$$lElektronische Materialien$$x0 000049699 970__ $$aVDB:(DE-Juel1)77738 000049699 980__ $$aVDB 000049699 980__ $$aConvertedRecord 000049699 980__ $$ajournal 000049699 980__ $$aI:(DE-Juel1)PGI-7-20110106 000049699 980__ $$aUNRESTRICTED 000049699 981__ $$aI:(DE-Juel1)PGI-7-20110106