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Highly efficient microcrystalline silicon solar cells deposited from a pure SiH4 flow

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2005
American Institute of Physics Melville, NY

Applied physics letters 87, 263503 () [10.1063/1.2152115]

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Abstract: A time-resolved optical emission spectroscopic study identified transient behavior of the excited SiH emission in a parallel plate SiH4/H-2 plasma. The transient behavior could be prevented by filling the background gas with H-2 prior to plasma ignition. Applying this condition, state-of-the-art microcrystalline silicon (mu c-Si:H) could be deposited irrespective of the applied H-2 flow, ultimately demonstrated by a 9.5% efficient solar cell deposited from pure SiH4. The results are discussed in terms of SiH4 back diffusion: an initial diffusion flux of SiH4 from the reactor's dead volume back into the plasma.

Keyword(s): J

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Note: Record converted from VDB: 12.11.2012

Contributing Institute(s):
  1. Institut für Photovoltaik (IPV)
Research Program(s):
  1. Photovoltaik (E02)

Appears in the scientific report 2005
Notes: This version is available at the following Publisher URL: http://apl.aip.org
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