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@ARTICLE{Wensorra:53333,
author = {Wensorra, J. and Lepsa, M. I. and Indlekofer, K. M. and
Förster, A. and Jaschinsky, P. and Voigtländer, B. and
Pirug, G. and Lüth, H.},
title = {{O}hmic contacts for {G}a{A}s based nanocolumns},
journal = {Physica status solidi / A},
volume = {203},
issn = {0031-8965},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {PreJuSER-53333},
pages = {3559 - 3564},
year = {2006},
note = {Record converted from VDB: 12.11.2012},
abstract = {Nonalloyed ohmic contacts with lateral dimensions in the
sub-100 nm range have been processed and characterized. The
contacts are suitable for the fabrication of GaAs/AlGaAs
nanocolumns designed in a 'top down' approach. They are
realized on n-type GaAs using a thin low-temperature grown
GaAs cap layer and Ti/Au metallization. For the lateral
patterning of the nanoscaled ohmic contacts, electron-beam
lithography based on Hydrogen Silsesquioxan (HSQ) negative
resist is used, followed by sputtering and plasma etching of
the metals. The I-V characteristics show ohmic contact
behavior and demonstrate the scaling of the proposed
contacts down to 50 nm lateral dimension. The specific
contact resistance is situated in the range of 1-2 x 10(-5)
Omega cm(2). (c) 2006 WILEY-VCH Verlag GmbH $\&$ Co. KGaA,
Weinheim.},
keywords = {J (WoSType)},
cin = {CNI / ISG-1 / ISG-3},
ddc = {530},
cid = {I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB41 / I:(DE-Juel1)VDB43},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Materials Science, Multidisciplinary / Physics, Applied /
Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000242536100021},
doi = {10.1002/pssa.200622484},
url = {https://juser.fz-juelich.de/record/53333},
}