Journal Article

PreJuSER-55912

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Weak antilocalization in a polarization-doped AlxGa1-xN/GaN heterostructure with single subband occupation

Thillosen, N.FZJ* ; Schäpers, T.FZJ* ; Kaluza, N.FZJ* ; Hardtdegen, H.FZJ* ; Guzenko, V. A.FZJ*

2006
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/2891  http://hdl.handle.net/2128/2619  doi:10.1063/1.2162871

Abstract: Spin-orbit scattering in a polarization-doped Al0.30Ga0.70N/GaN two-dimensional electron gas with one occupied subband is studied at low temperatures. At low magnetic fields weak antilocalization is observed, which proves that spin-orbit scattering occurs in the two-dimensional electron gas. From measurements at various temperatures the elastic scattering time tau(tr), the dephasing time tau(phi), and the spin-orbit scattering time tau(so) are extracted. Measurements in tilted magnetic fields were performed, in order to separate spin and orbital effects.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006
Notes: This version is available at http://dx.doi.org/10.1063/1.2162871 Copyright © American Institute of Physics

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