Zn and ZnO nanoparticles fabricated by ion implantation combined with thermal oxidation, and the defect-free luminescence

Amekura, H.; Plaksin, O. A.; Kishimoto, N.; Takeda, Y.; Sakuma, Y.; Umeda, N.; Buchal, C.

doi:10.1063/1.2193327

Journal Article

Zn and ZnO nanoparticles fabricated by ion implantation combined with thermal oxidation, and the defect-free luminescence

Amekura, H. ; Umeda, N. ; Sakuma, Y. ; Plaksin, O. A. ; Takeda, Y. ; Kishimoto, N. ; Buchal, C.FZJ*

2006
American Institute of Physics Melville, NY

Applied physics letters 88, 153119 (2006) [10.1063/1.2193327]

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Please use a persistent id in citations: http://hdl.handle.net/2128/18075 doi:10.1063/1.2193327

Abstract: Silica glass implanted with Zn ions of 60 keV to 1.0x10(17) ions/cm(2) was annealed in oxygen gas to form ZnO nanoparticles (NPs). In as-implanted state, the implanted Zn atoms form Zn metallic NPs inside of the silica. After annealing at 600 degrees C, ZnO NPs form on the surface, while Zn metallic NPs still remain in the deep region. At 700 degrees C, most of Zn atoms move to the surface to form the droplet-shaped ZnO NPs which show two photoluminescence bands, i.e., an exciton band at 375 nm and a defect band at similar to 500 nm. The defect band almost disappears in the samples annealed at 600 degrees C, which include both ZnO NPs and Zn NPs.

Keyword(s): J

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