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| Hauptseite > Publikationsdatenbank > Resistively switching Pt/Spin-on glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography |
| Hauptseite > Publikationsdatenbank > Resistively switching Pt/Spin-on glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography |
| Journal Article | PreJuSER-6109 |
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2009
Elsevier
[S.l.] @
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Please use a persistent id in citations: doi:10.1016/j.mee.2009.01.054
Abstract: Resistively switching materials are in the focus of investigations for use in next-generation non-volatile resistive random access memories (RRAM). Crossbar structures with integrated resistively switching spin-on glass were fabricated using UV nanoimprint lithography. 32 x 32 bit crossbar arrays with a half pitch of 50 nm were achieved. The switching characteristic of our Pt/spin-on glass/Ag material stack was proved on 100 x 100 nm(2) nanocells. It shows resistance switching behavior which is comparable to material systems where the formation and dissolution of metallic filaments through a porous matrix is assumed to be the responsible switching mechanism. (C) 2009 Elsevier B.V. All rights reserved.
Keyword(s): J ; Resistive switching (auto) ; Nanoimprint lithography (auto) ; Crossbar array (auto) ; Memory devices (auto)
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