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Structural and chemical characterization of TiO2 memristive devices by spatially-resolved NEXAFS

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2009
IOP Publ. Bristol

Nanotechnology 20, 485701 () [10.1088/0957-4484/20/48/485701]

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Abstract: We used spatially-resolved NEXAFS (near-edge x-ray absorption fine structure) spectroscopy coupled with microscopy to characterize the electronic, structural and chemical properties of bipolar resistive switching devices. Metal/TiO2/metal devices were electroformed with both bias polarities and then physically opened to study the resulting material changes within the device. Soft x-ray absorption techniques allowed isolated study of the different materials present in the device with 100 nm spatial resolution. The resulting morphology and structural changes reveal a picture of localized polarity-independent heating occurring within these devices initiated by and subsequently accelerating polarity-dependent electrochemical reduction/oxidation processes.

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Note: We thank J Borghetti, X Li, P Long, D A A Ohlberg, M D Pickett, Q Xia and W Wu for experimental assistance and P J Kuekes, D B Strukov and W M Tong for helpful discussions. The ALS is funded by the US Department of Energy's Office of Basic Energy Sciences and work at HP is sponsored by the US Government's Nano-Enabled Technology Initiative.

Contributing Institute(s):
  1. Elektronische Materialien (IFF-6)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

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