Journal Article

PreJuSER-61996

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Defect identification in GaAs grown at low temperatures by positron annihilation

Gebauer, J. ; Börner, F. ; Krause-Rehberg, R. ; Staab, T. E. M. ; Bauer-Kugelmann, W. ; Kögel, G. ; Triftshäuser, W. ; Specht, P. ; Lutz, R. C. ; Weber, E. R. ; Luysberg, M.FZJ*

2000
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/878

Abstract: We use positron annihilation to study vacancy defects in GaAs grown at low temperatures (LT-GaAs). The vacancies in as-grown LT-GaAs can be identified to be Ga monovacancies, V-Ga, according to their positron lifetime and annihilation momentum distribution. The charge state of the vacancies is neutral. This is ascribed to the presence of positively charged As-Ga(+) antisite defects in vicinity to the vacancies. Theoretical calculations of the annihilation parameters show that this assignment is consistent with the data. The density of V-Ga is related to the growth stoichiometry in LT-GaAs, i.e., it increases with the As/Ga beam equivalent pressure (BEP) and saturates at 2x10(18) cm(-3) for a BEP greater than or equal to 20 and a low growth temperature of 200 degrees C. Annealing at 600 degrees C removes V-Ga. Instead, larger vacancy agglomerates with a size of approximately four vacancies are found. It will be shown that these vacancy clusters are associated with the As precipitates formed during annealing. (C) 2000 American Institute of Physics. [S0021- 8979(00)02812-7].

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Festkörperforschung (IFF)

Research Program(s):

1. Festkörperforschung für die Informationstechnik (23.42.0)

Appears in the scientific report 2000
Notes: This version is available at the following URL: http://jap.aip.org

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