Measurement of effective electron mass in biaxial tensile strained silicon on insulator

Feste, S. F.; Buca, D.; Knoch, J.; Zhao, Q. T.; Schindlmayr, A.; Bouhassoune, M.; Mantl, S.; Schäpers, T.

doi:10.1063/1.3254330

Journal Article

Measurement of effective electron mass in biaxial tensile strained silicon on insulator

Feste, S. F.FZJ* ; Schäpers, T.FZJ* ; Buca, D.FZJ* ; Zhao, Q. T.FZJ* ; Knoch, J. ; Bouhassoune, M. ; Schindlmayr, A. ; Mantl, S.FZJ*

2009
American Institute of Physics Melville, NY

Applied physics letters 95, 182101 (2009) [10.1063/1.3254330]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17333 doi:10.1063/1.3254330

Abstract: We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov-de Haas oscillations in the temperature range of T=0.4-4 K for magnetic fields of B=0-10 T were measured. The effective electron mass in SSOI and SOI samples was determined as m(t)=(0.20 +/- 0.01)m(0). This result is in excellent agreement with first-principles calculations of the effective electron mass in the presence of strain.

Keyword(s): J ; density functional theory (auto) ; effective mass (auto) ; MOSFET (auto) ; Shubnikov-de Haas effect (auto) ; silicon-on-insulator (auto)

Classification:

Physics, Applied

Note: This work received funding from the EU through the NANOSIL Network of Excellence (Contract No. ICT-2007-216171) and the European Theoretical Spectroscopy Facility e-I3 ( Contract No. INFRA-2007-211956), and from the German Federal Ministry of Education and Research via the MEDEA+ project DECISIF (2T104).

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