Optical band gap of BiFe03 grown by adsorption-controlled molecular-beam epitaxy

Ihlefeld, J.F.; Pan, X. Q.; Xu, X.; Schlom, D. G.; Chen, Y.B.; Ramesh, R.; Rai, R.C.; Heeg, T.; Podraza, N. J.; Schubert, J.; Li, J.; Liu, Z.K.; Musfeldt, J.L.; Collins, R. W.

doi:10.1063/1.2901160

Journal Article

Optical band gap of BiFe03 grown by adsorption-controlled molecular-beam epitaxy

Ihlefeld, J. F. ; Podraza, N. J. ; Liu, Z. K. ; Rai, R. C. ; Xu, X. ; Heeg, T. ; Chen, Y. B. ; Li, J. ; Collins, R. W. ; Musfeldt, J. L. ; Pan, X. Q. ; Schubert, J.FZJ* ; Ramesh, R. ; Schlom, D. G.

2008
American Institute of Physics Melville, NY

Applied physics letters 92, 142908 (2008) [10.1063/1.2901160]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17409 doi:10.1063/1.2901160

Abstract: BiFeO3 thin films have been deposited on (001) SrTiO3 substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFeO3 films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with omega rocking curve full width at half maximum values as narrow as 29 arc sec (0.008 degrees). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFeO3 films. (C) 2008 American Institute of Physics.

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