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| Hauptseite > Publikationsdatenbank > Nanoimprint for future non-volatile memory and logic devices |
| Hauptseite > Publikationsdatenbank > Nanoimprint for future non-volatile memory and logic devices |
| Journal Article | PreJuSER-62881 |
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2008
Elsevier
[S.l.] @
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Please use a persistent id in citations: doi:10.1016/j.mee.2008.01.101
Abstract: Nanoimprint lithography (NIL) is used to realize next generation memory and logic devices. The simple device structure consists of a resistance switching material sandwiched between two metal nanoelectrodes. Bottom and top electrodes are aligned perpendicular to each other building a crossbar array structure. A significant advantage of these future devices in addition to its simplicity is the high integration density. Crossbar arrays with 200 nm electrodes and single cross junctions with 30 nm electrodes were achieved using UV NIL. The bottom electrodes were embedded and planarized by spin on glass, such that an even surface for the realization of the top electrodes by UV NIL could be obtained. Finally electrical measurements demonstrated the function of the fabricated devices. (c) 2008 Elsevier B.V. All rights reserved.
Keyword(s): J ; nanoimprint lithography (auto) ; crossbar array (auto) ; memory and logic devices (auto)
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