Action Potentials of HL-1 Cells Recorded With Silicon Nanowire Transistors

Eschermann, J. F.; Ingebrandt, S.; Offenhäusser, A.; Vu, X. T.; Stockmann, R.; Hüske, M.

doi:10.1063/1.3194138

Journal Article

Action Potentials of HL-1 Cells Recorded With Silicon Nanowire Transistors

Eschermann, J. F.FZJ* ; Stockmann, R.FZJ* ; Hüske, M.FZJ* ; Vu, X. T.FZJ* ; Ingebrandt, S.FZJ* ; Offenhäusser, A.FZJ*

2009
American Institute of Physics Melville, NY

Applied physics letters 95, 083703 (2009) [10.1063/1.3194138]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17334 doi:10.1063/1.3194138

Abstract: Silicon nanowire (NW) transistors were fabricated in a top-down process. These devices were used to record the extracellular potential of the spontaneous activity of cardiac muscle HL-1 cells. Their signals were measured by direct dc sampling of the drain current. An improved signal-to-noise ratio compared to planar field-effect devices was observed. Furthermore the signal shape was evaluated and could be associated to different membrane currents. With these experiments, a qualitative description of the properties of the cell-NW contact was obtained and the suitability of these sensors for electrophysiological measurements in vitro was demonstrated.

Keyword(s): J ; cellular biophysics (auto) ; elemental semiconductors (auto) ; nanowires (auto) ; silicon (auto) ; transistors (auto)

Classification:

Physics, Applied

Note: We thank the German Research Foundation for the financial support through the project "Mi-Besan" (contract no. OF22/7-1). Furthermore, we are grateful for the support during chip production of K.-H. Deussen, W. Michelsen, (both IBN1, FZJ), and the IBN process technology group. Also our thanks go to R. Helpenstein and B. Hofmann (both IBN2-BE) for their help with cell culturing. K. E. Michael is acknowledged for her help in the preparation of the manuscript.

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