Journal Article

PreJuSER-7133

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Evolution and stability of ordered SiGe islands grown on patterned Si(100) substrates

Dais, C. ; Mussler, G.FZJ* ; Sigg, H. ; Mueller, E. ; Solak, H. H. ; Grützmacher, D.FZJ*

2009
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17238  doi:10.1063/1.3117230

Abstract: SiGe quantum dots are proposed as building blocks for future Si device technology. However, in order to exploit the full potential of SiGe islands, it is necessary to control their positioning and size on a nanometer length. This is achieved by templated self-assembly, which combines substrate patterning and subsequent epitaxy. In this paper we report on the evolution of SiGe islands on patterned substrates under consideration of small template variations and postgrowth annealing. The impact of the structural variations on the optical properties of the islands is investigated by photoluminescence measurements. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3117230]

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (IBN-1)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2009

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Database coverage:

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