Journal Article

PreJuSER-7443

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Method for Suppression of Stacking Faults in Wurtzite III-V Nanowires

Shtrikman, H. ; Popovitz-Biro, R. ; Kretinin, A. ; Houben, L.FZJ* ; Heiblum, M. ; Bukala, M. ; Galicka, M. ; Buczko, R. ; Kacman, P.

2009
ACS Publ. Washington, DC

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Please use a persistent id in citations: doi:10.1021/nl803524s

Abstract: The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers with negligible intermixing of zinc blende stacking is reported. The suppression of the number of stacking faults was obtained by a procedure within the vapor-liquid-solid growth, which exploits the theoretical result that nanowires of small diameter ( approximately 10 nm) adopt purely wurtzite structure and are observed to thicken (via lateral growth) once the axial growth exceeds a certain length.

Keyword(s): J

Note: The Warsaw group thanks EC network SemiSpinNet (PITN-GA-2008-215368) for support. All computations were carried out in Cl TASK in Gdansk. The transmission electron microscopy studies were conducted at the Irving and Cherna Moskowitz Center for Nano and BioNano Imaging at the Weizmann Institute of Science. The access to the high-resolution STEM instrumentation was provided by the Ernst-Ruska Centre for Microscopy and Spectroscopy with Electrons of the Research Centre Rilich. H.S. acknowledges fruitful discussions with Dr. Brent Wacaser.

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Contributing Institute(s):

1. Mikrostrukturforschung (IFF-8)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)
2. SEMISPINNET - Initial Training Network in Nanoscale Semiconductor Spintronics (215368) (215368)

Appears in the scientific report 2009

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