Journal Article

FZJ-2016-03136

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Probing orbital ordering in LaVO$_{3}$ epitaxial films by Raman scattering

Vrejoiu, I. (Corresponding author) ; Himcinschi, C. ; Jin, L.FZJ* ; Jia, C.-L.FZJ* ; Raab, N.FZJ* ; Engelmayer, J. ; Waser, R.FZJ* ; Dittmann, R.FZJ* ; van Loosdrecht, P. H. M.

2016
AIP Publ. Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/11473  doi:10.1063/1.4945658

Abstract: Single crystals of Mott-Hubbard insulator LaVO3 exhibit spin and orbital ordering along with a structural change below ≈140 K. The occurrence of orbital ordering in epitaxial LaVO3films has, however, been little investigated. By temperature-dependent Raman scatteringspectroscopy, we probed and evidenced the transition to orbital ordering in epitaxial LaVO3film samples fabricated by pulsed-laser deposition. This opens up the possibility to explore the influence of different epitaxial strain (compressive vs. tensile) and of epitaxy-induced distortions of oxygen octahedra on the orbital ordering, in epitaxial perovskite vanadate films.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)
2. Elektronische Materialien (PGI-7)

Research Program(s):

1. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)

Appears in the scientific report 2016

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Database coverage:
; ; ; ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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