Journal Article

FZJ-2016-06405

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Complementary Strained Si GAA Nanowire TFET Inverter With Suppressed Ambipolarity

Luong, G. V. (Corresponding author)FZJ* ; Narimani, K.FZJ* ; Tiedemann, A.FZJ* ; Bernardy, P.FZJ* ; Trellenkamp, S.PGI-8-PT* ; Zhao, Q. T.FZJ* ; Mantl, S.FZJ*

2016
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/LED.2016.2582041

Abstract: In this letter, we present complementary tunneling field-effect transistors (CTFETs) based on strained Si with gate all around nanowire structures on a single chip. The main focus is to suppress the ambipolar behavior of the TFETs with a gate-drain underlap. Detailed device characterization and demonstration of a CTFET inverter show that the ambipolar current is successfully eliminated for both pand n-devices. The CTFET inverter transfer characteristics indicate maximum separation of the high/low level with a sharp transition (high voltage gain) at a Vdd down to 0.4 V. In addition, high noise margin levels of 40% of the applied Vdd are obtained.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
Current Contents - Engineering, Computing and Technology ; IF < 5 ; JCR ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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