Contribution to a book

FZJ-2016-06429

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Silicon-Based Cooling Elements

Balestra, F. (Editor) ; Leadley, D. ; Prest, M. ; Ahopelto, J. ; Brien, T. ; Gunnarsson, D. ; Mauskopf, P. ; Muhonen, J. ; Myronov, M. ; Nguyen, H. ; Parker, E. ; Prunnila, M. ; Richardson-Bullock, J. ; Shah, V. ; Whall, T. ; Zhao, Q.-T.FZJ*

2014
John Wiley & Sons, Inc. Hoboken, NJ, USA
ISBN: 1-84821-654-8, 978-1-84821-654-9

This record in other databases:

Please use a persistent id in citations: doi:10.1002/9781118984772.ch11

Abstract: This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1–xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.

Note: Description based upon print version of record; English

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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