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000824624 1001_ $$0P:(DE-HGF)0$$aWeidlich, P. H.$$b0
000824624 245__ $$aTracking the subsurface path of dislocations in GaN using scanning tunneling microscopy
000824624 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2015
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000824624 520__ $$aA methodology for the determination of the subsurface line direction of dislocations using scanning tunneling microscopy (STM) images is presented. The depth of the dislocation core is derived from an analysis of the displacement field measured by STM. The methodology is illustrated for dislocations at GaN( 101¯0 ) cleavage surfaces. It is found that the dislocation line bends toward the surface, changing from predominantly edge-type to more screw-type character, when approaching the intersection point. Simultaneously, the total displacement detectable at the surface increases due to a preferred relaxation towards the surface.
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000824624 7001_ $$0P:(DE-Juel1)143949$$aSchnedler, M.$$b1
000824624 7001_ $$0P:(DE-Juel1)145975$$aPortz, V.$$b2
000824624 7001_ $$0P:(DE-HGF)0$$aEisele, H.$$b3
000824624 7001_ $$00000-0002-4159-4373$$aStrauß, U.$$b4
000824624 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b5
000824624 7001_ $$0P:(DE-Juel1)130627$$aEbert, Ph.$$b6$$eCorresponding author
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