Journal Article

FZJ-2016-07187

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy

Weidlich, P. H. ; Schnedler, M.FZJ* ; Portz, V.FZJ* ; Eisele, H. ; Strauß, U. ; Dunin-Borkowski, R.FZJ* ; Ebert, P. (Corresponding author)FZJ*

2015
American Inst. of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17045  doi:10.1063/1.4926789

Abstract: A methodology for the determination of the subsurface line direction of dislocations using scanning tunneling microscopy (STM) images is presented. The depth of the dislocation core is derived from an analysis of the displacement field measured by STM. The methodology is illustrated for dislocations at GaN( 101¯0 ) cleavage surfaces. It is found that the dislocation line bends toward the surface, changing from predominantly edge-type to more screw-type character, when approaching the intersection point. Simultaneously, the total displacement detectable at the surface increases due to a preferred relaxation towards the surface.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 141 - Controlling Electron Charge-Based Phenomena (POF3-141) (POF3-141)

Appears in the scientific report 2016

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Database coverage:
; ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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