TY  - JOUR
AU  - Weidlich, P. H.
AU  - Schnedler, M.
AU  - Portz, V.
AU  - Eisele, H.
AU  - Strauß, U.
AU  - Dunin-Borkowski, Rafal
AU  - Ebert, Ph.
TI  - Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy
JO  - Journal of applied physics
VL  - 118
IS  - 3
SN  - 1089-7550
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2016-07187
SP  - 035302 -
PY  - 2015
AB  - A methodology for the determination of the subsurface line direction of dislocations using scanning tunneling microscopy (STM) images is presented. The depth of the dislocation core is derived from an analysis of the displacement field measured by STM. The methodology is illustrated for dislocations at GaN( 101¯0 ) cleavage surfaces. It is found that the dislocation line bends toward the surface, changing from predominantly edge-type to more screw-type character, when approaching the intersection point. Simultaneously, the total displacement detectable at the surface increases due to a preferred relaxation towards the surface.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000358429200048
DO  - DOI:10.1063/1.4926789
UR  - https://juser.fz-juelich.de/record/824624
ER  -