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@ARTICLE{Weidlich:824624,
author = {Weidlich, P. H. and Schnedler, M. and Portz, V. and Eisele,
H. and Strauß, U. and Dunin-Borkowski, Rafal and Ebert,
Ph.},
title = {{T}racking the subsurface path of dislocations in {G}a{N}
using scanning tunneling microscopy},
journal = {Journal of applied physics},
volume = {118},
number = {3},
issn = {1089-7550},
address = {Melville, NY},
publisher = {American Inst. of Physics},
reportid = {FZJ-2016-07187},
pages = {035302 -},
year = {2015},
abstract = {A methodology for the determination of the subsurface line
direction of dislocations using scanning tunneling
microscopy (STM) images is presented. The depth of the
dislocation core is derived from an analysis of the
displacement field measured by STM. The methodology is
illustrated for dislocations at GaN( 101¯0 ) cleavage
surfaces. It is found that the dislocation line bends toward
the surface, changing from predominantly edge-type to more
screw-type character, when approaching the intersection
point. Simultaneously, the total displacement detectable at
the surface increases due to a preferred relaxation towards
the surface.},
cin = {PGI-5},
ddc = {530},
cid = {I:(DE-Juel1)PGI-5-20110106},
pnm = {141 - Controlling Electron Charge-Based Phenomena
(POF3-141)},
pid = {G:(DE-HGF)POF3-141},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000358429200048},
doi = {10.1063/1.4926789},
url = {https://juser.fz-juelich.de/record/824624},
}