Journal Article

FZJ-2016-07498

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts

Schöneberg, J. (Corresponding author) ; Otte, F. (Corresponding author) ; Néel, N. ; Weismann, A. ; Mokrousov, Y.FZJ* ; Kröger, J. ; Berndt, R. ; Heinze, S.

2016
ACS Publ. Washington, DC

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Please use a persistent id in citations: doi:10.1021/acs.nanolett.5b05071

Abstract: Anisotropic magnetoresistance, that is, the sensitivity of the electrical resistance of magnetic materials on the magnetization direction, is expected to be strongly enhanced in ballistic transport through nanoscale junctions. However, unambiguous experimental evidence of this effect is difficult to achieve. We utilize single-atom junctions to measure this ballistic anisotropic magnetoresistance (AMR). Single Co and Ir atoms are deposited on domains and domain walls of ferromagnetic Fe layers on W(110) to control their magnetization directions. They are contacted with nonmagnetic tips in a low-temperature scanning tunneling microscope to measure the junction conductances. Large changes of the magnetoresistance occur from the tunneling to the ballistic regime due to the competition of localized and delocalized d-orbitals, which are differently affected by spin–orbit coupling. This work shows that engineering the AMR at the single atom level is feasible

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Contributing Institute(s):

1. Quanten-Theorie der Materialien (IAS-1)
2. Quanten-Theorie der Materialien (PGI-1)
3. JARA-FIT (JARA-FIT)
4. JARA - HPC (JARA-HPC)

Research Program(s):

1. 142 - Controlling Spin-Based Phenomena (POF3-142) (POF3-142)

Appears in the scientific report 2016

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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