Contribution to a conference proceedings/Contribution to a book

FZJ-2017-00071

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Direct bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform

Wirths, S. (Corresponding author) ; Geiger, R. ; Schulte-Braucks, C.FZJ* ; von den Driesch, N.FZJ* ; Stange, D.FZJ* ; Zabel, T. ; Ikonic, Z. ; Hartmann, J.-M. ; Mantl, S.FZJ* ; Sigg, H. ; Grutzmacher, D.FZJ* ; Buca, D.FZJ*

2015
IEEE

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Please use a persistent id in citations: doi:10.1109/IEDM.2015.7409615

Abstract: We report on the first experimental demonstration of direct bandgap group IV GeSn microdisk (MD) lasers (λem=2.5 µm) grown on Si(001). The evidence of lasing is supported by a detailed analysis of strain-dependent emission characteristics of GeSn alloys with xSn ≥ 12 at.%. Residual compressive strain within the layer is relieved via under-etching of the MD enabling increased energy offsets up to EL-EΓ=80 meV. The lasing threshold and max. temperature amount to 220 kW/cm2 and 135 K, respectively.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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