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@INBOOK{Luryi:825776,
      author       = {Stange, D. and Schulte-Braucks, C. and von den Driesch, N.
                      and Wirths, S. and Mussler, G. and Lenk, S. and Stoica, T.
                      and Mantl, S. and Grützmacher, D. and Buca, D. and Geiger,
                      R. and Zabel, T. and Sigg, H. and Hartmann, J. M. and
                      Ikonic, Z.},
      editor       = {Luryi, Serge and Xu, Jimmy and Zaslavsky, Alexander},
      title        = {{H}igh {S}n-{C}ontent {G}e{S}n {L}ight {E}mitters for
                      {S}ilicon {P}hotonics},
      address      = {Hoboken, NJ, USA},
      publisher    = {John Wiley $\&$ Sons, Inc.},
      reportid     = {FZJ-2017-00081},
      pages        = {181-195},
      year         = {2016},
      comment      = {Future Trends in Microelectronics / Luryi, Serge (Editor) ;
                      Hoboken, NJ, USA : John Wiley $\&$ Sons, Inc., 2016, ; ISBN:
                      9781119069119 ; doi:10.1002/9781119069225.ch2-6},
      booktitle     = {Future Trends in Microelectronics /
                       Luryi, Serge (Editor) ; Hoboken, NJ,
                       USA : John Wiley $\&$ Sons, Inc., 2016,
                       ; ISBN: 9781119069119 ;
                       doi:10.1002/9781119069225.ch2-6},
      abstract     = {The present chip technology is based on silicon with
                      increasing number of other materials integrated into
                      electrical circuits. This chapter presents a systematic
                      photoluminescence (PL) study of compressively strained,
                      direct-bandgap GeSn alloys, followed by the analysis of two
                      different optical source designs. First, a direct bandgap
                      GeSn light emitting diode (LED) will be characterized via
                      power-and temperature-dependent electroluminescence (EL)
                      measurements. Then, lasing will be demonstrated in a
                      microdisk (MD) resonator under optical pumping. The
                      integration of direct-bandgap GeSn-based devices as a light
                      source for on-chip communications offers the possibility to
                      monolithically integrate the complete photonic circuit
                      within mainstream silicon technology. The chapter describes
                      material properties using Ge0.875Sn0.125 epilayers of
                      various thicknesses. Temperature-dependent integrated PL
                      intensity is a suitable method to determine whether a
                      semiconductor has a direct or indirect fundamental bandgap.
                      In conclusion, the chapter presents growth and optical
                      characterization of high-quality GeSn alloys with very high
                      Sn content.},
      cin          = {PGI-9 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)7},
      doi          = {10.1002/9781119069225.ch2-6},
      url          = {https://juser.fz-juelich.de/record/825776},
}