Journal Article

FZJ-2017-00161

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Low V_π Silicon photonics modulators with highly linear epitaxially grown phase shifters

Azadeh, S. S. (Corresponding author)RWTH* ; Merget, F.RWTH* ; Romero-García, S.RWTH* ; Moscoso-Mártir, A.RWTH* ; von den Driesch, N.FZJ* ; Müller, J.RWTH* ; Mantl, S.FZJ* ; Buca, D. M.FZJ* ; Witzens, J. (Corresponding author)RWTH*

2015
Soc. Washington, DC

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Please use a persistent id in citations: doi:10.1364/OE.23.023526

Abstract: We report on the design of Silicon Mach-Zehnder carrier depletion modulators relying on epitaxially grown vertical junction diodes. Unprecedented spatial control over doping profiles resulting from combining local ion implantation with epitaxial overgrowth enables highly linear phase shifters with high modulation efficiency and comparatively low insertion losses. A high average phase shifter efficiency of VπL = 0.74 V⋅cm is reached between 0 V and 2 V reverse bias, while maintaining optical losses at 4.2 dB/mm and the intrinsic RC cutoff frequency at 48 GHz (both at 1 V reverse bias). The fabrication process, the sensitivity to fabrication tolerances, the phase shifter performance and examples of lumped element and travelling wave modulators are modeled in detail. Device linearity is shown to be sufficient to support complex modulation formats such as 16-QAM.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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