Journal Article

FZJ-2017-01616

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells

Stange, D. (Corresponding author)FZJ* ; von den Driesch, N.FZJ* ; Rainko, D.FZJ* ; Roesgaard, S. ; Povstugar, I.FZJ* ; Hartmann, J.-M. ; Stoica, T. ; Ikonic, Z. ; Mantl, S.FZJ* ; Grützmacher, D.FZJ* ; Buca, D. M.FZJ*

2017
OSA Washington, DC

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Please use a persistent id in citations: doi:10.1364/OPTICA.4.000185

Abstract: Group IV photonics is on its way to be integrated with electronic circuits, making information transfer and processing faster and more energy efficient. Light sources, a critical component of photonic integrated circuits, are still in development. Here, we compare multi-quantum-well (MQW) light-emitting diodes (LEDs) with Ge0.915Sn0.085 wells and Si0.1Ge0.8Sn0.1 barriers to a reference Ge0.915Sn0.085 homojunction LED. Material properties as well as band structure calculations are discussed, followed by optical investigations. Electroluminescence spectra acquired at various temperatures indicate effective carrier confinement for electrons and holes in the GeSn quantum wells and confirm the excellent performance of GeSn/SiGeSn MQW light emitters.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)
3. Analytik (ZEA-3)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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