Journal Article

FZJ-2017-02569

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Line shape of the Raman 2D peak of graphene in van der Waals heterostructures

Neumann, C. (Corresponding author) ; Banszerus, L. ; Schmitz, M. ; Reichardt, S. ; Sonntag, J.FZJ* ; Taniguchi, T. ; Watanabe, K. ; Beschoten, B.RWTH* ; Stampfer, C.RWTH*FZJ*

2016
Wiley-VCH70889 Weinheim

This record in other databases:    

Please use a persistent id in citations: doi:10.1002/pssb.201600283

Abstract: The Raman 2D line of graphene is widely used for device characterization and during device fabrication as it contains valuable information on, e.g., the direction and magnitude of mechanical strain and doping. Here, we present systematic asymmetries in the 2D line shape of exfoliated graphene and graphene grown by chemical vapor deposition. Both graphene crystals are fully encapsulated in van der Waals heterostructures, where hexagonal boron nitride and tungsten diselenide are used as substrate materials. In both material stacks, we find very low doping values and extremely homogeneous strain distributions in the graphene crystal, which is a hall mark of the outstanding electronic quality of these samples. By fitting double Lorentzian functions to the spectra to account for the contributions of inner and outer processes to the 2D peak, we find that the splitting of the sub-peaks, math formulacm−1 (hBN-Gr-WSe2) and math formulacm−1 (hBN-Gr-hBN), is significantly lower than the values reported in previous studies on suspended graphene.

---

Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017

---

Database coverage:
Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

---